On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
Identifieur interne : 000104 ( Russie/Analysis ); précédent : 000103; suivant : 000105On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
Auteurs : RBID : Pascal:10-0507774Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
In this article, we report on the theoretical analysis of transmission electron microscopy (TEM) images of surface [nSb quantum dots (QDs) coherently grown on InAs substrate. A finite element method (FEM) is used to calculate elastic fields and total displacements in a QD and an adjusted region of the substrate. The effects of QD form factor and QD aspect ratio δ on displacements and TEM images are analyzed. A quasilinear dependence of radial displacements on radial coordinate for spherical, elliptical, and truncated spherical QDs is demonstrated. It has been found that the displacement field does not depend on the shape and aspect ratio for QDs with > δc1, and the upper part of a QD remains practically undistorted for QDs with δ≥ δc2. For InSb/InAs heterosystem these critical values are δc1 ≃ 0.13 and δc2 ≃ 0.33. The total displacements are used for computation of TEM diffraction contrast associated with QDs. To achieve this the Howie-Whelan dynamic approach is utilized. Calculated TEM images of heavily strained QDs demonstrate the picture of pseudo-moiréwith a strong dependence of moiré-like fringe distance Δ on aspect ratio δ. This dependence gives the possibility to determine the aspect ratio and height of QDs from the results of TEM experiments.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003A42
- to stream Main, to step Repository: 003C15
- to stream Russie, to step Extraction: 000104
Links to Exploration step
Pascal:10-0507774Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface</title><author><name sortKey="Bert, N A" uniqKey="Bert N">N. A. Bert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytechnicheskaya 26</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Freidin, A B" uniqKey="Freidin A">A. B. Freidin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Problems in Mechanical Engineering, Bolshoj 61, Vas. Ostrov</s1><s2>199178 St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>199178 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Kolesnikova, A L" uniqKey="Kolesnikova A">A. L. Kolesnikova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Problems in Mechanical Engineering, Bolshoj 61, Vas. Ostrov</s1><s2>199178 St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>199178 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Korolev, I K" uniqKey="Korolev I">I. K. Korolev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Problems in Mechanical Engineering, Bolshoj 61, Vas. Ostrov</s1><s2>199178 St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>199178 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Romanov, A E" uniqKey="Romanov A">A. E. Romanov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytechnicheskaya 26</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Polytechnique School, Aristotle University of Thessaloniki</s1><s2>Thessaloniki 54124</s2><s3>GRC</s3><sZ>5 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Thessaloniki 54124</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0507774</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0507774 INIST</idno><idno type="RBID">Pascal:10-0507774</idno><idno type="wicri:Area/Main/Corpus">003A42</idno><idno type="wicri:Area/Main/Repository">003C15</idno><idno type="wicri:Area/Russie/Extraction">000104</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Displacement field</term><term>Elastic fields</term><term>Finite element method</term><term>Form factors</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Modelling</term><term>Moire fringes</term><term>Quantum dots</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Frange moiré</term><term>Microscopie électronique transmission</term><term>Méthode élément fini</term><term>Champ élastique</term><term>Facteur forme</term><term>Modélisation</term><term>Champ déplacement</term><term>Antimoniure d'indium</term><term>Point quantique</term><term>Arséniure d'indium</term><term>InSb</term><term>InAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this article, we report on the theoretical analysis of transmission electron microscopy (TEM) images of surface [nSb quantum dots (QDs) coherently grown on InAs substrate. A finite element method (FEM) is used to calculate elastic fields and total displacements in a QD and an adjusted region of the substrate. The effects of QD form factor and QD aspect ratio δ on displacements and TEM images are analyzed. A quasilinear dependence of radial displacements on radial coordinate for spherical, elliptical, and truncated spherical QDs is demonstrated. It has been found that the displacement field does not depend on the shape and aspect ratio for QDs with > δ<sub>c1</sub>, and the upper part of a QD remains practically undistorted for QDs with δ≥ δ<sub>c2</sub>. For InSb/InAs heterosystem these critical values are δ<sub>c1</sub> ≃ 0.13 and δ<sub>c2 </sub>≃ 0.33. The total displacements are used for computation of TEM diffraction contrast associated with QDs. To achieve this the Howie-Whelan dynamic approach is utilized. Calculated TEM images of heavily strained QDs demonstrate the picture of pseudo-moiréwith a strong dependence of moiré-like fringe distance Δ on aspect ratio δ. This dependence gives the possibility to determine the aspect ratio and height of QDs from the results of TEM experiments.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>207</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface</s1></fA08><fA11 i1="01" i2="1"><s1>BERT (N. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>FREIDIN (A. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOLESNIKOVA (A. L.)</s1></fA11><fA11 i1="04" i2="1"><s1>KOROLEV (I. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROMANOV (A. E.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physico-Technical Institute, Polytechnicheskaya 26</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Problems in Mechanical Engineering, Bolshoj 61, Vas. Ostrov</s1><s2>199178 St. Petersburg</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Polytechnique School, Aristotle University of Thessaloniki</s1><s2>Thessaloniki 54124</s2><s3>GRC</s3><sZ>5 aut.</sZ></fA14><fA20><s1>2323-2326</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000193397050180</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0507774</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>In this article, we report on the theoretical analysis of transmission electron microscopy (TEM) images of surface [nSb quantum dots (QDs) coherently grown on InAs substrate. A finite element method (FEM) is used to calculate elastic fields and total displacements in a QD and an adjusted region of the substrate. The effects of QD form factor and QD aspect ratio δ on displacements and TEM images are analyzed. A quasilinear dependence of radial displacements on radial coordinate for spherical, elliptical, and truncated spherical QDs is demonstrated. It has been found that the displacement field does not depend on the shape and aspect ratio for QDs with > δ<sub>c1</sub>, and the upper part of a QD remains practically undistorted for QDs with δ≥ δ<sub>c2</sub>. For InSb/InAs heterosystem these critical values are δ<sub>c1</sub> ≃ 0.13 and δ<sub>c2 </sub>≃ 0.33. The total displacements are used for computation of TEM diffraction contrast associated with QDs. To achieve this the Howie-Whelan dynamic approach is utilized. Calculated TEM images of heavily strained QDs demonstrate the picture of pseudo-moiréwith a strong dependence of moiré-like fringe distance Δ on aspect ratio δ. This dependence gives the possibility to determine the aspect ratio and height of QDs from the results of TEM experiments.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A46</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Frange moiré</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Moire fringes</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Méthode élément fini</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Finite element method</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Champ élastique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Elastic fields</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Facteur forme</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Form factors</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Modélisation</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Modelling</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Champ déplacement</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Displacement field</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Campo desplazamiento</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point quantique</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quantum dots</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>341</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000104 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000104 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:10-0507774
|texte= On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
}}
| This area was generated with Dilib version V0.5.77. |  |